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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 40 Watts Power Gain -- 17 dB Efficiency -- 26% Adjacent Channel Power - 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters
MRF9180 MRF9180S
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
CASE 375D-04, STYLE 1 NI-1230 MRF9180
CASE 375E-03, STYLE 1 NI-1230S MRF9180S
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 388 2.22 -65 to +200 200 Unit Vdc Vdc Watts W/C C C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.45 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF9180 MRF9180S 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, IMD 700 mA, IRL 700 mA, Gps -- 17.5 -- dB -- -15 -9 dB -- -31 -28 dBc Gps 16 17.5 -- dB Coss Crss -- -- 77 3.8 -- -- pF pF VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 2.9 3.7 0.19 6 4 -- 0.5 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
35
39
--
%
Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 700 mA, f1 = 880.0 MHz) (1) Each side of device measured separately. (2) Device measured in push-pull configuration. 700 mA,
--
38.5
--
%
IMD 700 mA, IRL 700 mA, P1dB
--
-31
--
dBc
--
-13
--
dB
--
170
--
W
MRF9180 MRF9180S 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) Gps 700 mA, 700 mA, -- 55 -- % -- 16.5 -- dB
Output Mismatch Stress (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 700 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in push-pull configuration.
No Degradation In Output Power Before and After Test
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S 3
VGG + C13
B2
B4 C14 C16 C22
B6 + L3 Z22 C20 C10 C17 Z16 DUT Z17 C9 R2 COAX 3 C26 + C27 + C28
VDD
Z18 R1 COAX 1
Z20
Z24
RF INPUT Z1
Z6 Z2 L1 Z3 C1 Z4 Z7 Z5 C2 C3
Z8
Z10 C4 C6
Z12 C7 Z13 C5
Z14
C18 L4 Z26 RF OUTPUT
Z9
Z11
C8 Z15
Z28
Z29 C29
Z27
COAX 2 COAX 4 VGG + C11 B1 B3 C12 Z19 Z21 C15 Z23 C19 L2 B5 C21 + C23 + C24 + C25 Z25
VDD
B1, B2, B5, B6 B3, B4 C1 C2, C3, C5, C6, C12, C14, C19, C20, C21, C22 C4, C9, C10, C15, C16 C7 C8 C11, C13 C17 C18 C23, C24, C26, C27 C25, C28 C29 Coax1, Coax2 Coax3, Coax4 L1, L2, L3 L4 R1, R2
Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 0.6-4.5 pF Variable Capacitor 47 pF Chip Capacitors, B Case 12 pF Chip Capacitors, B Case 0.8-9.1 pF Variable Capacitor 7.5 pF Chip Capacitor, B Case 10 F, 35 V Tantalum Surface Mount Chip Capacitors 3.6 pF Chip Capacitor, B Case 5.1 pF Chip Capacitor, B Case 22 F, 35 V Tantalum Surface Mount Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.4-2.5 pF Variable Capacitor 25 , Semi Rigid Coax, 70 mil OD, 1.05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 18.5 nH Mini Spring Inductors, Coilcraft 12.5 nH Mini Spring Inductor, Coilcraft 510 , 1/10 W Chip Resistors
Z1 Z2 Z3 Z4, Z5, Z26, Z27 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z28 Z29 Board Material
0.420 x 0.080 Microstrip 0.190 x 0.080 Microstrip 0.097 x 0.080 Microstrip 2.170 x 0.080 Microstrip 0.075 x 0.080 Microstrip 0.088 x 0.220 Microstrip 0.088 x 0.220 Microstrip 0.460 x 0.220 Microstrip 0.685 x 0.625 Microstrip 0.055 x 0.625 Microstrip 0.055 x 0.632 Microstrip 0.685 x 0.632 Microstrip 0.732 x 0.080 Microstrip 0.060 x 0.080 Microstrip 0.230 x 0.080 Microstrip 0.460 x 0.080 Microstrip 30 mil Teflon, r = 2.55, Copper Clad, 2 oz Cu
Figure 1. 880 MHz Broadband Test Circuit Schematic
MRF9180 MRF9180S 4
MOTOROLA RF DEVICE DATA
C13
VGG
B2
B4
MRF9180 900MHz PUSH PULL Rev 01
B6
C26 C27
C28
VDD
C14 R1 L1 C3 C4 CUT OUT AREA C6 C5 C7 R2 C12
Resistor Resistor
C22 C10 C16 L3 C20 C18 C19 L4 C29
C8
C17
C1
C2
C9
C15
L2
C21
C11
VGG
B1
B3
B5
C25 C23 C24
VDD
Figure 2. 880 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S 5
TYPICAL CHARACTERISTICS
h , DRAIN EFFICIENCY (%) 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 860 865 870 IMD IRL Gps h VDD = 26 Vdc Pout = 170 W (PEP) IDQ = 2 700 mA 50 45 40 35 -30 -32 -34 Two-Tone Measurement 100 kHz Tone Spacing 875 880 885 f, FREQUENCY (MHz) 890 895 -36 -38 900
IMD, INTERMODULATION DISTORTION (dBc)
-10 -12 -14 -16 -18
Figure 3. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
18 G ps , POWER GAIN (dB) 17 16 15 14
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 -70
Gps, POWER GAIN (dB)
40 30 20 h VDD = 26 Vdc IDQ = 2 700 mA f1 = 880 MHz 10 0 1000
14 12 10 8 0.1
3rd Order 5th Order 1 7th Order
10 100 Pout, OUTPUT POWER (WATTS) PEP
1 10 100 Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MRF9180 MRF9180S 6
MOTOROLA RF DEVICE DATA
h, DRAIN EFFICIENCY (%)
III III III III III III III III III
2000 mA 1700 mA 1400 mA 1100 mA 800 mA 1
19
-10 -20 -30 -40 -50 -60 1400 mA 1 2000 mA VDD = 26 Vdc f1 = 880 MHz f2 = 880.1 MHz
880 mA 1100 mA
VDD = 26 Vdc f1 = 880 MHz f2 - 880.1 MHz
IRL, INPUT RETURNLOSS (dB) 1700 mA
10 100 Pout, OUTPUT POWER (WATTS) PEP
10 100 Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
VDD = 26 Vdc IDQ = 2 700 mA f1 = 880 MHz f2 = 880.1 MHz
60 18 16 Gps 50
16 G ps , POWER GAIN (dB) 14 12 10 8 6
Gps
40 20
h
VDD = 26 Vdc IDQ = 2 700 mA f1 = 880 MHz f2 - 880.1 MHz
0 -20 -40 -60
IMD 1 10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD versus Output Power
18 16 G ps , POWER GAIN (dB) 14 12 10 8 6 Gps VDD = 26 Vdc IDQ = 2 700 mA f = 880 MHz IS 97, Pilot, Sync, Paging Traffic Codes 8 through 13
40 20 0 -20 -40 -60 -80 100
h
750 MHz 1.98 MHz 1 10 Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Power Gain, Efficiency and ACPR versus Output Power
MOTOROLA RF DEVICE DATA
h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB)
h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
18
60
MRF9180 MRF9180S 7
Zo = 5
f = 895 MHz Zsource Zload
f = 895 MHz
f = 865 MHz
f = 865 MHz
VDD = 26 V, IDQ = 2 x 700 mA, Pout = 170 W PEP f MHz 865 880 895 Zsource 2.95 + j0.00 2.48 + j0.67 2.44 + j1.18 Zload 3.83 + j1.02 3.55 + j1.38 3.34+ j1.51
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 10. Series Equivalent Input and Output Impedance
MRF9180 MRF9180S 8
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S 9
NOTES
MRF9180 MRF9180S 10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
2X
Q bbb
M
A
A G4 L
1 2
TA
M
B
M
B
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF
3
4
B
(FLANGE)
4X
K aaa
M
4X
D TA
M
B
M
ccc
M
TA R
(LID)
M
B
M
ccc
M
TA N (LID)
M
B
M
H
F
S C
(INSULATOR)
bbb
M
TA
M
B
M
E
PIN 5 T M (INSULATOR) bbb
M
SEATING PLANE
TA
M
B
M
CASE 375D-04 ISSUE C NI-1230 MRF9180
STYLE 1: PIN 1. 2. 3. 4. 5.
A
A
(FLANGE) 4X
Z
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K L M N R S Z aaa bbb ccc INCHES MIN MAX 1.325 1.335 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.355 0.365 0.365 0.375 0 0.040 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.66 33.91 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 9.01 9.27 9.27 9.53 0 1.02 0.33 REF 0.25 REF 0.51 REF
L B
1 2
3 4X
4
B
(FLANGE) M
K aaa
4X
ccc
M
TA R
(LID)
M
B
M
D
M
TA
M
B
H ccc
M
F
TA N (LID)
M
B
M
S
(INSULATOR)
bbb C
M
TA
M
B
M
E
PIN 5 M (INSULATOR) bbb
M
T
SEATING PLANE
TA
M
B
M
CASE 375E-03 ISSUE C NI-1230S MRF9180S
STYLE 1: PIN 1. 2. 3. 4. 5.
MOTOROLA RF DEVICE DATA
MRF9180 MRF9180S 11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/
MRF9180 MRF9180S 12
MRF9180/D MOTOROLA RF DEVICE DATA

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